IT abroad: Intel introduces new technology of 3-D transistors

Intel Corporation has announced a brand new technology of transistor production using a three-dimensional structure.

The new development which is called by Intel a “breakthrough in the evolution of the transistor” provides an unprecedented combination of improved performance and energy efficiency compared to previous state-of-the-art transistors. US corporation still remains the sole semiconductor manufacturer ready to put transistors using a three-dimensional structure into high-volume manufacturing.

Intel will introduce a revolutionary 3-D transistor design called Tri-Gate into high-volume manufacturing at the 22-nanometer (nm) node in an Intel chip codenamed "Ivy Bridge." This technology breakthrough will also aid in the delivery of more highly integrated Intel Atom processor-based products that scale the performance, functionality and software compatibility of Intel architecture while meeting the overall power, cost and size requirements for a range of market segment needs.

The 22nm 3-D Tri-Gate transistors provide up to 37 percent performance increase at low voltage versus Intel's 32nm planar transistors. The new transistors consume less than half the power when at the same performance as 2-D planar transistors on 32nm chips.